Paul Bergstrom’s research interests include the integration of microelectromechanical (MEMS) elements with microelectronics processing in ways which minimize the impact of the MEMS processing on the standard microelectronic (CMOS, BiCMOS, etc.) process and device parameters. This research reflects the drive towards a more globally integrated microsystem technology that allows multiple MEMS technologies to be utilized in an integrated fashion. This effort has led to research in pursuit of ways to integrated post-CMOS technologies while maintaining the good MEMS materials properties required for applications such as accelerometers, other inertial sensors, pressure sensors, radio frequency (RF) resonating elements, and actuator structures, e.g., micromirrors, liquid and gas valves, pumps, etc. A related area of interest is the development of low-temperature MEMS structural materials and localized annealing processes for integrated microsystem technologies. New and novel deposition and material processing may allow for good mechanical and electrical properties at temperatures compatible with post-CMOS integration. Recent areas of research activity include the development of nanoscaled processing and characterization for quantum dot-based electronic devices, such as the single-electron transistor. Effort to develop SET devices functional at room temperature has been demonstrated by Bergstrom’s research group, utilizing beam-based fabrication and nanoimprint-based processing to demonstrate the functional characterization of thousands of SET devices at room temperature and below. The quantum dot- and quantum wire-based electronic development has led to several applications for biochemical and chemical sensing platforms. An additional area of significant research activity is in developing porous semiconductor materials for chemical, optical, and thermal microsystems. Bergstrom’s research has demonstrated morphological control of macroporous silicon for chemical microsystems and is actively demonstrating electroosmotic pumping limits based on a highly ordered 20nm mesoporous silica