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Mark Rodwell holds the Doluca Family Endowed Chair in Electrical and Computer Engineering. He is a Professor in the Electrical and Computer Engineering Department at UCSB. He also directs the UCSB Nanofabrication laboratory and its participation in the NSF National Nanofabrication Infrastructure Network (NNIN). He received his Ph.D. in Electrical Engineering from Stanford University in 1988. He worked at AT&T Bell Laboratories during 1982-1984. His research group works to extend the operation of electronics to the highest feasible frequencies. Their research thus includes semiconductor devices (diodes & transistors), semiconductor fabrication process, circuit design, interconnects, instruments, and communications systems. Particular interests include THz InP bipolar transistors, nm III-V MOSFETs for both VLSI and THz applications, and IC design above 50 GHz in both III-V and Silicon VLSI technologies. Prof. Rodwell received the 2010 IEEE Sarnoff Award and the 2009 IEEE IPRM Conference Award for the development of InP-based bipolar IC technology, at both the device and the circuit design levels, for mm-wave and sub-mm-wave applications. His group's work on GaAs Schottky-diode ICs for picosecond / mm-wave instrumentation was awarded the 1997 IEEE Microwave Prize and the 1998 European Microwave Conference Microwave Prize. His group's collaborative development, with Prof. Madhow's group, of mm-wave line-of-sight MIMO received the 2012 IEEE Marconi Prize Paper Award. Prof. Rodwell was elected IEEE Fellow in 2003